| IF-A01 |
Broadband SPST Switches in 250-nm GaN HEMT Process
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Yunshan Wang, Pragya Tripathi, Hoi-Wong Lei and Huei Wang (National Taiwan Univ., Taiwan)
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| IF-A02 |
A Reconfigurable 60-GHz VCO with -103.2 dBc/Hz Phase Noise in a 0.13-µm SiGe BiCMOS Technology
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Christian Hoyer, Florian Protze, Jens Wagner and Frank Ellinger (Technische Universität Dresden, Germany)
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| IF-A03 |
Self-Aligned On-Chip Spherical Dielectric Resonators and Antennas for SiGe MMIC
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Georg Sterzl (Univ. of Stuttgart, Germany); Yu Zhu (Technische Universität Dresden, Germany); Jan Hesselbarth (Univ. of Stuttgart, Germany); Corrado Carta and Marco Lisker (IHP, Germany); Frank Ellinger (Technische Universität Dresden, Germany)
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| IF-A04 |
Broadband Class-E Power Amplifier Design Employing a Double Reactance Compensation Matching Network
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Ziming Zhao and Xiao-Wei Zhu (Southeast Univ., China)
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| IF-A05 |
Harmonic Behavioral Model in RF Domain for Short-Wave Power Amplifier
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Tingting Yao, Jun Peng, Fei You and Songbai He (UESTC, China)
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| IF-A06 |
A 1.5-6 GHz Continuous Tuned GaAs MMIC Phase Shifter
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Xiao-Liang Wu, Jian-Bo Wang, Jian-Yu Ye and Guang Hua (Southeast Univ., China)
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| IF-A07 |
X-Band Filter-Amplifier for Radio Frequency Front-End Receiver Systems
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Phanam Pech, Samdy Saron, Girdhari Chaudhary and Yongchae Jeong (Jeonbuk National Univ., Korea)
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| IF-A08 |
A 3.5-GHz 6-Bit CMOS Vector-Summing Phase Shifter with Low Phase and Amplitude Errors Using Area-Resizing Technique
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Chia-Wei Hsu and Jia-Shiang Fu (NCU, Taiwan)
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| IF-A09 |
Vector Sum Phase Shifter Using Phase Control Linearization Technique
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Ren Imanishi and Hideyuki Nosaka (Ritsumeikan Univ., Japan)
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| IF-A10 |
A 28 GHz Complementary QVCO Using Current Re-Used and Parallel Coupling Technique
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Yu-Teng Chang (Yuan Ze Univ., Taiwan); Chin-Chia Chang and Hsin-Chia Lu (NTU, Taiwan)
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| IF-A11 |
A Novel Design Method of Class E/F Power Amplifier Based on Waveform Analysis
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Guoping Hong, Yonglun Luo, Rong Chang, Wanghong Yang and Danlei Xuan (UESTC, China)
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| IF-A12 |
A New Design for Class EF PA Based on Waveform Analysis
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Rong Chang, Yonglun Luo, Guoping Hong, Wanghong Yang and Danlei Xuan (UESTC, China)
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| IF-A13 |
2-18GHz Reconfigurable Distributed Power Amplifier Using 0.25um GaN Technology
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Xiaojing Hu, Zhuohao Liu and Ziqi Pu (UESTC, China); Pei-Ling Chi (NCTU,Taiwan); Xilin Zhang (UESTC, China); Xu Zhu and Xiang Li (Northern Institute of Electronic Equipment of China, China); Yong Wang and Tao Yang (UESTC, China, NCTU, Taiwan)
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| IF-A14 |
Inverse Class-F Linear PA for Middle Band 5G Applications
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Yuuri Honda, Satoshi Tanaka, Kenji Mukai, Yusuke Tanaka and Hiroshi Okabe (Murata Manufacturing Co., Ltd., Japan)
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| IF-A15 |
High-Power and Low-Loss Ku-Band GaN HEMT Switch with Inductive Resonator to Compensate for Off-Capacitance of HEMT
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Yoshifumi Kawamura, Tetsunari Saito, Kunihiro Endo, Masaomi Tsuru and Koji Yamanaka (Mitsubishi Electric Corp., Japan)
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| IF-A16 |
A CMOS Voltage-Controlled Oscillator Using Dual-Balance Capacitive-Division Structures
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Yu-Hsin Chang and Yong-Lun Luo (National Formosa Univ., Taiwan)
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| IF-A17 |
A Fixed-Frequency, Tunable Dielectric Resonator Oscillator with Phase-Locked Loop Stabilization
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Robin Kaesbach, Marcel van Delden and Thomas Musch (Ruhr-Universität Bochum, Germany)
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| IF-A18 |
28 GHz Band Wireless Power Transfer Experiments with a GaAs Rectenna MMIC with an Inductive High Impedance Patch Antenna
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Tsukasa Hirai, Takumi Itoh, Yuya Hirose, Naoki Sakai, Keisuke Noguchi and Kenji Itoh (Kanazawa Inst. of Tech., Japan); Naoki Hasegawa, Takashi Hirakawa, Yuta Nakamoto and Yoshichika Ohta (Softbank Corp., Japan)
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| IF-A19 |
5.8 GHz Band High Power Rectenna with a Monopole Antenna on an Artificial Magnetic Conductor
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Naoki Furutani, Keisuke Miyashita, Shigeru Makino, Fumiya Komatsu, Naoki Sakai and Kenji Itoh (Kanazawa Inst. of Tech., Japan)
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| IF-A20 |
Analysis of the Operation of a Hybrid Amplifier Based on the Doherty Amplifier
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Ren Furumoto, Daisuke Yasunobu and Kenjiro Nishikawa (Kagoshima Univ., Japan)
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| IF-A21 |
A High-Gain K/Ka-Band Frequency Tripler with High Fundamental and Harmonics Rejection in 130-nm SiGe BiCMOS
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Yu Zhu, Niko Joram and Frank Ellinger (Technische Universität Dresden, Germany)
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| IF-A22 |
Design of Dual-Band Antenna Low-Noise Preamplifiers by Multi-Objective Optimization and Its Verification with More Precise Measurement Method
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Josef Dobeš and Jan Míchal (Czech Technical Univ. in Prague, Czech Republic)
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| IF-A23 |
A 0.15 um Depletion Mode GaN Bootstrapped N-Path Filter with 23dBm Inband Blocker Handling
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Netanel Desta and Emanuel Cohen (Technion Inst. of Tech., Israel)
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| IF-A24 |
Multiband Doherty Power Amplifier Design for 5G NR Sub-6 GHz Handset Applications
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Kiichiro Takenaka, Yuuma Noguchi, Satoshi Arayashiki and Takaya Wada (Murata Manufacturing Co., Ltd., Japan)
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| IF-A25 |
Modeling of Quad-Parallel Bipolar Transistors in the 300 GHz Band
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Minami Nasu (Tokyo Univ. of Science, Japan); Shinsuke Hara and Akifumi Kasamatsu (NICT, Japan); Yohtaro Umeda and Kyoya Takano (Tokyo Univ. of Science, Japan)
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