Short Courses

TU1-F4 Principles of 5G RF Front End Module

Room

F204

Date and Time

11/29 (Tue) 09:30-12:30

Chair

Florinel Balteanu (Skyworks Solutions, U.S.A.)

Organizer

Florinel Balteanu (Skyworks Solutions, U.S.A.)

Abstract

The research area of improving the performance, cost and size of RF solutions for incoming 5G LTE is very active with many developments. Mobile cellular subscribers reached more than 6 billion in 2021 and 5G LTE brings high data capacity as low latency using sub-6GHz and mm-Wave spectrum. The proliferation of worldwide smartphones has been in part possible due to increase computational power of CMOS technology in lower feature nodes as 7nm/14nm. This has made also possible to essentially enhance RF CMOS through digital signal processing (DSP) and digital calibration. Despite this progress there is a shift in terms of what parts of the RF system are portioned in advanced CMOS nodes and what blocks are left and integrated together with other analogue and RF blocks in a front end module (RFFEMs). The short course presents the current status of 4G/5G LTE RF Front End and techniques to deliver an over gigabit-per-second data rate such as Carrier Aggregation and MIMO as well Wider Modulation Bandwidth for LTE and mm-Wave spectrum. The high speed wireless ecosystem which includes 5G LTE and WiFi 6 (802.11ax) which are deployed uses two frequency domains: sub 6GHz frequency domain and mm-Wave spectrum. Mm-Wave have been used initially to increase the capacity for backhaul network and allow low latency. The mobile devices added new wireless functionality in 6GHz-8.5GHz spectrum such as Ultra-wideband (UWB) for proximity indoor location as other smart applications. From this prospective and the concurrently deployment for 5G LTE New Radio (NR) with the actual 4G LTE will increase the complexity RFFEMs and will be covered in this short course. The short course will cover 4G/5G RFEEMs architectures currently used in cellular applications and the challenges for the 5G deployment as well the evolution to 6G.

Lecturer

Florinel Balteanu (Skyworks Solutions, U.S.A.)

• Principles of 5G RF Front End Module

Course Syllabus

Objectives

The audience will gain knowledge about RF circuits used in current and future smartphones and mobile devices.

TU1-F5 IoT 101

Room

F205

Date and Time

11/29 (Tue) 09:30-12:30

Chair

Yee Loo Foo (Multimedia Univ., Malaysia)

Organizer

Yee Loo Foo (Multimedia Univ., Malaysia)

Abstract

"Spend half a day to grasp the concept of IoT"

A computer-based hands-on course that opens the door to the concept of Internet of Things (IoT). Through this course, the participants can get a hands-on experience in emulating IoT devices publishing their data, and the users collecting and then analyzing the data.

Lecturer

Foo Yee Loo (Multimedia Univ., Malaysia)

• IoT 101

Course Syllabus

Learning Objectives

Learning Outcome

After completing the course, the participants will be able to collect data remotely, timely, effectively, and accurately from IoT devices.

TU2-F5 Fundamentals of GaN HEMT Modeling and Power Amplifier Design

Room

F205

Date and Time

11/29 (Tue) 13:30-16:30

Chairs

Kenjiro Nishikawa (Kagoshima Univ., Japan)
Kazuya Yamamoto (Mitsubishi Electric Corp., Japan)

Organizer

Kenjiro Nishikawa (Kagoshima Univ., Japan)
Kazuya Yamamoto (Mitsubishi Electric Corp., Japan)

Abstract

GaN HEMT modeling and its-based power amplifier design play the important role in realizing current microwave/millimeter-wave communications and radars systems. This course presents fundamentals of GaN HEMT modeling design. It also provides basics of power amplifier design while focusing on GaN HEMT-based high-efficiency power amplifiers. The presenters are a device and modeling engineers of the worldwide GaN leading suppliers and two experienced circuit designers of current GaN PAs. Therefore, attendees will be able to learn the circuit design methodology of power amplifiers as well as GaN HEMT modeling.

Lecturers

Hiroshi Yamamoto (Sumitomo Electric Industries, Ltd., Japan)

• Fundamentals and Modeling Techniques of GaN HEMT for Microwave Power Amplifiers

Yuji Komatsuzaki and Shuichi Sakata (Mitsubishi Electric Corp., Japan)

• Fundamentals of Microwave Power Amplifier Design

Course Syllabus

Sponsorship

IEEE MTT-9 (Microwave and Millimeter-wave Solid-State Devices Committee)

TU2-F6 Basic and Advanced Filtenna Designs

Room

F206

Date and Time

11/29 (Tue) 13:30-16:00

Chair

Chun-Ping Chen (Kanagawa Univ., Japan)

Organizer

Masataka Ohira (Saitama Univ., Japan)

Abstract

This short course provides basic and advanced design techniques of filtering antennas (filtenna). The filtenna is a co-designed circuit of microwave/millimeter-wave bandpass filter and antenna, showing the radiation in a specified frequency band and high rejection level at the out-of-band. Such an antenna-in-package technique becomes more important for next-generation wireless devices.

The short course starts from the basic filtenna design based on a well-established filter synthesis theory using coupling coefficient, external Q factor, and radiation Q factor, like a Chebyshev inline filter.

In the advanced filtenna design, a coupling-matrix based design technique is presented, demonstrating illustrative examples of LTCC and SIW filtennas in millimeter-wave band and a tunable microstrip filtenna in microwave band. In addition to narrowband filtenna designs, a wideband filtenna design will also be introduced in this course.

Lecturer

Masataka Ohira (Saitama Univ., Japan)

• Basic Filtenna Design
• Advanced Filtenna Design

Course Syllabus

1. Basic Filtenna Design

2. Advanced Filtenna Design