| B [ Passive Devices ] |
|
| Workshop 06 |
Nov 29 (Thu). 13:15 to 16:00 |
Room F204 |
Recent Trend of Modeling for SMD Using in High Speed Digital and Microwave Circuits
Organizer/Chair : Toshio Ishizaki (Panasonic Electronic Devices Co., Ltd.) |
- 1
-
Circuit Simulation of High Frequency Modules, in Consideration of Structural Influence Caused by Mounting Components
Ryuji Murata (Taiyo Yuden Co., Ltd.)
|
- 2
-
Multi-Port Analysis of Electronic Components - Modeling of EMC Components for High-Speed Digital Circuit
Yoshikazu Fujishiro (TDK Corp.)
|
- 3
-
Modeling of Polymer Aluminum Capacitor (SP-Cap) and Noise Suppression Effects Confirmed by Simulation
Hiroshi Higashitani (Panasonic Electronic Devices Co., Ltd.)
|
- 4
-
Recent Development in High Speed Digital Simulation Technology
- Necessity of Handling Component and Board
Akifumi Nakatani (Ansoft Japan K.K.)
|
| A [ Active Devices ] |
|
| Workshop 07 |
Nov 29 (Thu). 13:15-16:00 |
Room F205 |
Recent Progress and Perspectives on Power Amplifiers for Wireless Communication Terminals
Organizers/Chairs : Kazutomi Mori, Noriharu Suematsu (Mitsubishi Electric Corp.) |
- 1
- High Efficiency Doherty Amplifier with Good Linearity for Mobile Applications
Bumman Kim (Pohang Univ. of Science and Technology)
|
- 2
- Balanced Power Amplifier and Its Implementation in Mobile Handsets
Gary Zhang (Skyworks Solutions, Inc.)
|
- 3
-
InGaP HBT MMIC Power Amplifiers for L to S Band Wireless Applications
Teruyuki Shimura, Kazuya Yamamoto, Miyo Miyashita, Kosei Maemura, Makio Komaru (Mitsubishi Electric Corp.)
|
- 4
- CMOS Power Amplifier for Wireless Terminals
Chang-Ho Lee, Haksun Kim, Joy Laskar (Samsung RFIC Design Center, Georgia Institute of Technology)
|
| B [ Passive Devices ] |
|
| Workshop 09 |
Nov 30 (Fri). 09:00-11:45 |
Room F204 |
RF-MEMS and Related Technologies
Organizer/Chair : Hiroshi Okazaki (NTT DoCoMo, Inc.) |
- 1
-
Recent Trend of RF MEMS Technology
Kuniki Ohwada (Teikyo Univ.)
|
- 2
-
Wafer Level Encapsulation and Its Application to Integrated RF-MEMS Devices
Junichi Kodate, Kei Kuwabara, Norio Sato, Hiroki Morimura, Hiromu Ishii (NTT)
|
- 3
-
RF-MEMS Tunable Circuits
Tamotsu Nishino, Yukihisa Yoshida, Yusuke Kitsukawa, Sang-Seok Lee (Mitsubishi Electric Corp.)
|
- 4
-
RF MEMS Variable Capacitor for Wireless Handsets
Tamio Ikehashi (Toshiba Corp.)
|
| A [ Active Devices ] |
|
| Workshop 10 |
Nov 30 (Fri). 09:00-11:45 |
Room F205 |
Polar-Loop Type Transmitter Techniques and Frequency Modulation Techniques with Frequency Synthesizer
Organizer : Shoichi Narahashi (NTT DoCoMo, Inc.)
Chair : Toshio Nojima (Hokkaido Univ.) |
- 1
-
Highly Efficient Transmitter Architecture with Burst-Width Envelope Modulation Based on Triangle-Wave Comparison PWM
Makoto Taromaru (ATR)
|
- 2
-
Polar-Transmitter Technique for GSM/EDGE Mobile-Phone Applications
Taizo Yamawaki (Hitachi, Ltd.)
|
- 3
-
FM Modulation in Frequency Synthesizer with DDS
Kenichi Tajima (Mitsubishi Electric Corp.)
|
- 4
- SmartPhone Architecture and Trends
Fazal Ali (Qualcomm Inc.)
|
