Workshop
Workshop
01
|
Wednesday, November
26, 14:00 to 17:00 |
Room F201+F202 |
Present State and Perspective on Ultra-Wideband
System
Organizer/Chair Shigenobu Sasaki (Niigata Univ.) |
1. Overview of UWB Systems - Trends of R&D and Regulation
-
Ryuji Kohno (Yokohama National Univ.) |
2. Review of Signal Design and Detection for UWB Systems
Sigenobu Sasaki,
Yukitoshi Sanada (Keio Univ.) |
3. Review of Ultra-Wideband Propagation Studies
Takehiko Kobayashi
(Tokyo Denki Univ.) |
4. Present State and Issue in Apparatus Development for UWB
Systems
Toshiaki Matsui,
Akifumi Kasamatsu, Hitoshi Utagawa, Keren LI (CRL) |
> Page Top
Workshop
02
|
Wednesday, November
26, 14:00 to 17:00 |
Room F203 |
Theory and Application of Metamaterials
Organizer/Chair Ikuo Awai (Yamaguchi Univ.) |
1. Polarization Transformation Characteristics of Multilayered
Chiral Slab
Mitsuru Tanaka,
Atsushi Kusunoki (Oita Univ.) |
2. Microwave Characteristics of Artificial Dielectric Made
of Metal Strips
Hiroshi Kubo
(Yamaguchi Univ.) |
3. Characteristics and Applications of Planar Negative Refractive
Index Media
Tatsuo Itoh,
Atsushi Sanada, Christophe Caloz (UCLA) |
4. Printed Microwave Bandgap Structure
Shigeo Kawasaki,
Hideyuki Ishida, Ryuta Sonoda, Naoki Ohkubo (Tokai
Univ.) |
> Page Top
Workshop
03
|
Wednesday, November
26, 14:00 to 17:00 |
Room F204 |
Recent Progress in Power Devices of Wide-Bandgap
Compound Semiconductor
Organizer Junji Saito (Fujitsu
Quantum Devices Ltd.) Chair Yasuo
Ohno (Tokushima Univ.) |
1. Technical trend of power amplifiers for the cellular
base stations and required performance for device
Hironori Sakamoto (Japan Radio Co., Ltd.) |
2. High Frequency Power Devices and Expectation for Wide Bandgap
Semiconductors
Yasuo Ohno,
Jin-Ping Ao (Tokushima Univ.) |
3. Nitride Semiconductor RF Power Device Technology
Masaaki Kuzuhara
(R&D Association
for Future Electron Devices) |
4. GaN HEMT for High Power Amplifiers of Mobile Telecommunication
Base Stations
Kazukiyo Joshin (Fujitsu Laboratories Ltd.) |
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