The trend for high levels of integration in wireless receivers is now well established. This requires the elimination of as many off-chip elements as is possible, which implies on-chip image rejection and channel-select filtering. These functions must consume low power, which requires that the circuits should operate at low frequencies; thus the need to translate the signals of interest to low or zero IF(intermediate frequency).

This short course will first describe the practical problems associated with translating the various modulation schemes in use today to zero and low IF. Various methods to mitigate these problems will be presented. Circuit techniques associated with zero and low IF receiver sections, such as active and passive polyphase filters, high linearity channel select filters, and DC nulling or cancellation, will be shown. Finally, some case studies will be presented of zero and low-IF receivers that have been developed for demanding applications, and selected performance comparisons with discrete superheterodyne implementations.

A microwave oscillator is one of the most important devicesfor wireless systems. It is also a key device as a clock source for optical communication systems. The demands for the oscillator are reducing cost and phase noise. This workshop will present oscillator design techniques and phase-locked loop(PLL) technologies for wireless terminals and optical receivers.
For the wireless terminal application, reducing cost is necessary. Si-based oscillators are most promising for a relatively lowf-requency (below ~10GHz) application, while at higher frequency (up to millimeter-waves), how it is achieved is a critical issue.
A PLL for the wireless application requires low phase noise, fast switching speed and low-power dissipation; however these requirements have a trade-off relationship. For high-speed clock and data recovery(CDR) applications, attaining the low timing jitter and higher tolerance to consecutive identical digits is required. Design techniques for a fully integrated Si-based voltage-controlled oscillator(VCO) and frequency multiplied millimeter-wave VCO will be presented. A PLL analysis based on a transfer function and PLL design techniques for use in CDR applications will also be presented.

WS1-1	PLL Synthesizer for Wireless Terminal Kenji Itoh, Mitsubishi Electric Corp., Japan
WS1-2	PLL Architectures for Clock and Data Recovery Circuits Hideyuki Nosaka, NTT, Japan
WS1-3	Low Power, Low Phase Noise Integrated RF-VCO on Silicon Process Nobuyuki Itoh, Toshiba Corp., Japan
WS1-4	Oscillator Designs for Recent K-Band and Millimeter -Wave Applications Tsuneo Tokumitsu, Fujitsu Quantum Devices Ltd., Japan

Currently, the users of wireless communications are increasing, and are requiring higher data rate services. Also, the new generation wireless communication systems, such as 3G, 4G, WLAN using 5GHz band and so on, stimulate such users more and more. In this situation, the effective usage of the limited frequency resources becomes the important problem, and the smart antenna (adaptive array antenna) is expected to be the best technology to overcomethis problem. The adaptive beam forming realizes desired signal power increase and interferences reduction, and reaches the improvement of the system capacity. Furthermore, smart antennas have other benefits, such as the reduction of the transmit power, the extension of coverage areas and so on. Therefore, the smart antenna technology must be the key technology to enhance the next generation wireless systems.

In this workshop, the latest smart antenna technologies and their practical applications will be introduced. Also, the presentation will focus on the embodiment of smart antenna systems and their experimental results, key devices for the development.

WS2-1	A Smart Antenna Base Station Operating in IS2000 Seoung Won Choi and Heung-Jae Im, Hanyang University, Korea
WS2-2	From Single to Dual Array Architectures A system Perspective Mark Beach, University of Bristol, U.K.
WS2-3	Latest Signal Processing Technologies for Next Generation Wireless Systems Nobuyoshi Kikuma, Nagoya Institute of Technology, Japan
WS2-4	Ray-oriented Modeling of Spatio-temporal and MIMO Channels: -Superresolution Channel Sounding and Raytracing Simulation- Jun-ichi Takada, Kei Sakaguchi, Houtao Zhu and Kiyomichi Araki, Tokyo Institute of Technology, Japan
WS2-5	Adaptive Array Steered by Local Phase Shifters (AA-LPS): -A Low-cost Approach with BiCMOS IC for High Speed FWA and WLAN Shuichi Obayashi, Toshiba America Research, Inc., Japan

The Space Solar Power Station/Satellite(SPS) is a huge solar power station in geostationary orbit, 36,000km above. In Japan, the SPS is currently designed at the SSPS committee in NASDA(National Space Development Agency of Japan) from FY 1998 and also at SSPS committee in METI(Ministry of Economy, Trade and Industry) from FY 2000. In the U.S.A., an SSPS program called SERT(Space solar power Exploratory Research & Technology program) was carried out in FY 2000. The SPS is one hopeful candidate to solve the so-called 3E trilemma of decreasing CO2 emmision (Earth Environment), Economic growth and increasing Energy demand. This workshop will present a microwave power transmission technology for the SPS and for other spin-off applications. An electric power is transferred from the SPS to the ground via microwaves. A diameter of a transmitting antenna array is a few km and a diameter of a receiving antenna array is a few km. Over 90% of a transmitted microwave power is received in the receiving antenna array, which is called rectenna, rectifying antenna, array. One goal is to develop an MPT system with over 80% DC-RF conversion efficiency and with accurate and high speed beam control with huge phased array in order to realize the final SPS system.

A light weight MPT system below a few kg/kW should be achieved in order to decrease the cost for launching the SPS. We also have to develop a rectenna array with over 80% RF-DC conversion efficiency.

WS9-1	Microwave Tubes for Microwave Power Transmission Yoshiro Takahashi, IHI Aerospace Co., Ltd., Japan
WS9-2	SPS Concept with High Efficiency Phase Control Technology Hiroshi Ikematsu, Tomohiro Mizuno, Hiroyuki Satoh, Kazuyuki Takada and Izumi Mikami, Mitsubishi Electric Corp., Japan
WS9-3	Development of Microwave Power Transmission Equipment for SSPS Research Facility Keiichi Morishita, Chiaki Yasuda, Katsumi Kito, Hiroshi Matsumoto*, Kozo Hashimoto* and Naoki Shinohara*, Mitsubishi Heaby Industries, Ltd., *Kyoto University, Japa
WS9-4	Rectenna - Microwave Rectifying Antenna - for Microwave Power Transmission Yoshiyuki Fujino, CRL, Japan
WS9-5	Applications of the Active Integrated Antenna Technique in the Space Solar Power Satellite Shigeo Kawasaki, Tokai University, Japan

Emerging requirements for creating an IT-based society have spurred businesses with millimeter-wave systems such as wireless LANs, Giga-bit Home-Links and ITS. Here, we will survey markets for MMW systems, emphasizing circuits and modules that will bring cost-reduction and, thereby, promote the commercialization of MMW consumer products.
Several RF front-end structures for millimeter wave short-range broadband wireless communication systems are presented. A 60GHz receiver is based on the self-oscillating sub-harmonic pumping. The ability of the integrated antenna to reject a balanced signal is used to prevent local-power leakage. Design principles and simulated and measured data will be presented.

A compact 156Mbps radio transceiver with optimizing RF architecture in the 38GHz band will be presented. Threedimensional laminated MCMs using plastic materials will be proposed. A DR-VCO fabricated on the MCM structure will enable a compact MSK modulator. A fabricated wireless-LAN system will be also demonstrated in the indoor-environment.
For short-range giga-bit wireless applications, low-cost 60GHz-band modules have been developed utilizing sophisticated technologies with flip-chip devices and multi-layer ceramic packages.

WS4-1	Overview of Markets and Technologies for mm-wave Commercial Applications Toshiaki Matsui, CRL, Japan
WS4-2	Millimeter-wave Front Ends Integrated with Antennas Ji-Yong Park and Tatsuo Itoh, UCLA, U.S.A.
WS4-3	Millimeter-wave Broadband Wireless-LAN System Using Low-cost MCM Techniques Kazuaki Takahashi and Masugi Inoue*, Matsushita Electric Industrial, Co., Ltd., *CRL, Japan
WS4-4	60GHz-band Flip-chip Module Technology for Giga-bit Wireless Communication Systems Kenichi Maruhashi, NEC Corp., Japan

Successful development of critical RF integrated circuits, RFIC, is important for the success of many products delivered to the market today, particularly in the wireless area. Many new applications are appearing. Designing RFICs and making them into successful products requires skills, which are distinctly different from those needed to establish and maintain high volume production of GaAs, InGaP, SiGe, or InP technologies for RFICs. Instead of developing in-house semiconductor capabilities, many companies have chosen to work with outside foundries to develop their products. We will explore the advantages and disadvantages of working with outside foundries for the development of RFICs.

We have invited speakers that can provide insight from both the perspective of the outside foundry provider and from the perspective of the foundry user.
Topics to be discussed include:  1. How to make the foundry customer successful  2. Design tools needed or provided  3. Minimizing development cycle times  4. Is this approach cost effective?

WS5-1	Introduction to Working With RF Foundries Thomas R. Joseph, RF Micro Devices, U.S.A.
WS5-2	RFIC Product Development Using Foundries -From a Fabless Infrastructure RFIC Company's Perspective Brad Nelson, Sirenza Microwaves, U.S.A.
WS5-3	The New GaAs Foundry: High Performance Technology and Fast Turn-Around Service S. M. Joseph Liu, WIN Semiconductors, Taiwan
WS5-4	Partnering with a Foundry: Support, Service, and Communication are Keys to Success Rob Hamilton, TriQuint Semiconductor, U.S.A.
WS5-5	Reflections on Foundries Thomas R.Joseph, RF Micro Devices, U.S.A.

Antennas for small mobile terminals are well known from mobile and cordless phones and have changed from extractable antennas and small helix to integrated antennas over the last few years. The questions, how does they work on a small terminal and what is the performance of the different antennas will be discussed and exemplified through both theoretical and practical designs using numerical techniques. Performance in terms of size, bandwidth, Total Radiated Power(TRP), Total Isotropic Sensitivity(TIS), Mean Effective Gain(MEG) and peak Specific Absorption Rate(SAR) will be introduced and tradeoffs between the performance parameters will be discussed. Further the influence from nearby objects (often the human operator) on various terminal types will be discussed and results from several investigations presented.

As the performance in terms of TRP, TIR and SAR vary tenfold among commercial phones both the network operators and the users have been concerned. This is the reason why 3GPP recently decided to have a mandatory test including the antenna. The principle of this test and other coming tests for 2G terminals will be discussed and all components in a measurement system including the error budget will be given.

Continued advances in developing Si RFICs for wireless applications requires the process and device development of silicon technologies. This workshop is intended to address the latest progress of Si process/device technology and circuit techniques to realize transceiver system ICs. The first speaker presents the latest SiGe HBT technology and its application for 40Gbps optical communication. The second speaker reports new SiGe : C HBT technology and discusses the effect of carbon on HBT performances. The third speaker presents the development of RF systems on chip by using BiCMOS process. The last speaker reports some circuitry attempts to realize transceiver ICs by developing RF core circuits having intelligent bias circuits.

WS6-1	SiGe HBTs for Optical Fiber Links Yukihiro Kiyota, Katsuyoshi Washio, Tsutomu Udo*, and Takashi Hashimoto, Hitachi Ltd., *Hitachi ULSI Systems Co., Ltd., Japan
WS6-2	SiGe:C HBT Technology Teruhito Ohnishi, Toru Saitoh, Ken Idota, Yoshihiko Kanzawa, Takahiro Kawashima, Koichiro Yuki, Akira Asai, Takeshi Takagi, Shigeki Sawada, and Keiichiro Shimizu, Matsushita Electric Industrial Co., Ltd., Japan
WS6-3	Si RF-IC Circuit Techniques for Direct-Conversion Receiver Satoshi Tanaka, Taizo Yamawaki, Norio Hayashi, Masumi Kasahara, Bob Henshaw*, Hitachi, Ltd., Japan, *TTP Communications, U.S.A.
WS6-4	Intelligent Bias Circuit Techniques for Si Transceiver System IC's Noriharu Suematsu, Eiji Taniguchi, and Shintaro Shinjo, Mitsubishi Electric Corp., Japan

In wireless terminals, miniaturized terminal implementation is very important for market demands. For this objective, research and development activities on the high integration RF-IC have been in high concentration. Also reduction of number of parts and cost is very important motivation for these activities. Based on these backgrounds, all circuit blocks are going toward integration on one chip. Based on this technical background, this session is organized to present the cutting edge of the technical region. First of all, a historical overview from GaAs, SiGe to CMOS is presented to indicate evolution in semiconductor techniques. In next presentation, integration techniques for hottest target, the GSM/ UMTS terminal, is presented. In addition, power amplifiers, directconversion receivers and VCOs are presented as a typical example of the latest trends in RF circuit technologies.

WS7-1	RF IC Techniques from GaAs to SiGe to CMOS Christian Kermarrec, ADI, U.S.A.
WS7-2	System and Circuit Integration Techniques for GSM and UMTS Mobiles Robert Weigel, University of Erlangen-Nurnberg/DICE, Germany
WS7-3	Withdrawn
WS7-4	Direct Conversion Receiver and its Utilization for Mobile Terminals Kenji Itoh, Mitsubishi Electric Corp., Japan
WS7-5	Optimization of SiGe HBT VCOs for Wireless Applications Tom K. Johansen and Lawrence E. Larson*, Technical University of Denmark, Denmark, *UCSD, U.S.A.
WS7-6	Discussions

The development of RF microelectromechanical(MEMS) switches has been progressing at a relatively rapid pace since the first practical dc-contact(series) and capacitive(shunt) switches were published in 1995. They offer substantially higher performance than p-i-n or field-effect transistor(FET) diode switches and are expected to be used extensively in MEMS phase shifters and reconfigurable circuits. Several problems related to long-term reliability, packaging, high-power handling, and fabrication cost are being addressed, however, it is expected that practical solutions will be available in the coming 3-5years.

This workshop will present the latest development in RF MEMS switches and their applications.

WS8-5

WS8-1	An Overview of the Failure Mechanisms of MEMS Switches Gabriel M. Rebeiz, University of Michigan, U.S.A.
WS8-2	Development and Packaging of RF MEMS Series Switch Tomonori Seki, Omron Corp., Japan
WS8-3	Millimeter-wave Tunable Circuits Using MEMS Technology Yongwoo Kwon, Seoul National University, Korea
WS8-4	RF MEMS Micro-switch and Its Application to a Phased-Array Antenna Kenichiro Suzuki, NEC Corp., Japan
Tunable RF-MEMS Filters and Future Trend in RF MEMS Technologies Gabriel M. Rebeiz, University of Michigan, U.S.A.

Generally, the design process is started from choosing between two aspects; how to analyze the object and how to use the simulator. The former weighs on accuracy and/or theoretical progress and the latter seeks for convenience of the simulator as a design tool. Both of them are important for investigation of the characteristics of the microwave circuit.

The topic of this WS is the simulation technologies for microwave circuit design. In order to discuss the theme from the two standing points mentioned above, we have five distinguished speakers to introduce numerical and analytical techniques and simulator technologies. The first three speakers from universities will lead the audience to the world of attractive analytical techniques by way of CAD model extraction and verification by measurement for the transistor, hierarchy of global modeling simulations for the devices and circuits, and global simulation by means of Extended FDTD and Envelop EM for an active integrated antenna. In the second half, the two speakers from software companies will give exciting talks about modern software architecture interplayed with the nonlinear simulation technology and evolution of the commercial EM simulator from the prototype to ABS.
We believe all talks will fascinate the audience who are interested in this field.

WS3-1	Introduction Shigeo Kawasaki, Tokai University, Japan
WS3-2	Conventional Transistor Non-Linear CAD Model Extraction and Verification using a Microwave Large Signal Network Analyser Paul J. Tasker, Cardiff University, U.K.
WS3-3	Hierarchy of Global Modeling Simulations: From Circuit-Based to Physics-Based Models Samir M. El-Ghazaly, Stephen Goodnick*, Yasser Hussain*, Muhammad Waliullah* and Robert Grondin, The University of Tennessee, *Arizona State University, U.S.A.
WS3-4	Full Wave Time Domain Analysis of Microwave Antenna and Active Nonlinear Microwave Circuits Hsiao-Ping Tsai and Tatsuo Itoh, UCLA, U.S.A.
WS3-5	Nonlinear Analysis Techniques and Simulator Architecture Stephen Maas, Applied Wave Research, Inc., U.S.A.
WS3-6	Development of Commercial Electromagnetic Software James C. Rautio, Sonnet Software, Inc., U.S.A.

Advances in modern RF wireless communications are creating a demand for reduction of interference with adjacent channel beyond that available in the conventional receiver front-end system of the mobile base station.
This workshop will present promising technologies for improving the front-end system of the mobile base station by using high-Tc superconducting (THS) filters.

The aim of the workshop is to bring together distinguished researchers, filter designers and carriers involved in the study of microwave HTS filters and systems.
The subject matter ranges from basic material characterizations to commercial applications of HTS, such as "Microwave measurements of HTS films", "Reduction of Interference and Noise", "SuperFilters Enhance Uplink Quality" and "Front End Field Trials in Urban Wireless Networks".

WS10-1	Recent Progress of HTS Films for Microwave Filters Katsumi Suzuki, Superconductivity Research Laboratory, ISTEC, Japan
WS10-2	Microwave Measurements of HTS Films and Dielectric Substrates for HTS Filter Designs Yoshio Kobayashi, Saitama University, Japan
WS10-3	A 5GHz Band Coplanar Superconducting Filter Shoichi Narahashi, Kunihiro Kawai and Kei Satoh, NTT DoCoMo, Inc., Japan
WS10-4	HTS Filters for Investigation on Reduction of Interference with Adjacent Channel Nobuyoshi Sakakibara, Denso Corp., Japan.
WS10-5	Measurement and Evaluation for Inter-modulation Interference Using the HTS Filter Mitsunari Okazaki, Alps Electric Co., Ltd., Japan
WS10-6	Withdrawn
WS10-7	SuperFiltersR Enhance Uplink Quality, Capacity, and Coverage in Wireless Systems Robert B. Hammond, Superconductor Technologies Inc., U.S.A.
WS10-8	Results of Superconductor Front End Field Trials in Urban Wireless Networks James P. Simmons, Jr., Conductus, Inc., U.S.A.
WS10-9	New HTS Technologies for Advanced 3G and 4G Networks Randy W. Simon, Conductus, Inc., U.S.A.