MWE 2005   Workshop [3]
 
  01−03  04−07  08−10  11−14  15−18 → Back to List
 A [ Passive Circuits ]
Workshop 08 Nov 10 (Thu).   13:30−16:30 Room  F203
 Recent Technologies of High-Performance Miniaturized
Microwave and Millimeter-Wave Passive Devices
Organizer : Tadashi Kawai (Univ. of Hyogo) Chair : Kouji Wada (The Univ. of Electro-Communications)  
1. Passive Components on Si CMOS Chip
 
益 一哉 (東工大)
2. Development of Embedded Passive Components in LTCC for High Frequency Applications
 
大橋 英征、米田 諭、湯浅 健、大和田 哲 (三菱電機)
3. Recent Progress in Ultra-Wideband Antenna Technologies
 
小林 岳彦 (東京電機大)
4. Superconducting Bandpass Filters for Digital TerrestrialBroadcasting Relay Stations
 
橋本 龍典、福家 浩之、相賀 史彦、加屋野 博幸、山崎 六月 (東芝)、金森 香子、中北 久雄 (NHK)
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 C [ Wireless Systems ]
Workshop 09 Nov 10 (Thu).   13:30−16:30 Room  F204
 Cognitive Radio and Its Related RF Technology
Organizer/Chair : Noriharu Suematsu (Mitsubishi Electric Corp.) Chair : Hiroshi Harada (NICT)  
1. Cognitive Radio Technology
 
Hiroshi Harada (NICT)
2. Current Status of SDR Forum
 
Takuzou Fujii (Hitachi Kokusai Electric Inc.)
3. RF Technologies for SDR/Cognitive Radio
 
Kiyomichi Araki (Tokyo Institute of Technology)
4. Multi-Band/Multi-Mode RFIC for SDR/Cognitive Radio Terminals
 
Noriharu Suematsu, Chiemi Kageyama, Shintaro Shinjo, Kensuke Nakajima (Mitsubishi Electric Corp.)
5. Filtering Challenges For Multi-Band, Multi-Link RF Front Ends For Cellular Phones
Ulrich Bauernschmitt, Christian Block, Clemens C. W. Ruppel (EPCOS AG, Germany)
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 B [ Active Circuits ]
Workshop 10 Nov 10 (Thu).   13:30−16:30 Room  F206
 High Power GaN Devices and Their Circuit Applications
Organizer : Kazukiyo Joshin (Fujitsu Laboratories Ltd.) Chair : Toshihide Kikkawa
(Fujitsu Laboratories Ltd.)  
1. Physical Phenomena Limiting the RF Performance of AlGaN/GaN HFET Power Amplifiers
 
Robert J. Trew (North Carolina State Univ., U.S.A.)
2. 100-MM Gan-On-Silicon Based Solutions for RF-Cellular Infrastructures
 
Kevin Linthicum, Apurva Chaudhari, Jennifer Gao, Allen Hanson, Wayne Johnson, Jeff Marquart, Walter Nagy, Edwin Piner, Pradeep Rajagopal, Sameer Singhal, Craig Strautin, Robert Therrien, Joe Williamson Kevin Linthicum, Apurva Chaudhari, Jennifer Gao, Allen Hanson, Wayne Johnson ,Jeff Marquart ,Walter Nagy ,Edwin Piner ,Pradeep Rajagopal ,Sameer Singhal ,Craig Strautin, Robert Therrien , Joe Williamson (Nitronex Corp., U.S.A.)
3. A High Efficiency GaN-HEMT for W-CDMA Base Station
 
Seigo Sano, Norihiko Ui (ユーディナデバイス)
4. AlGaN/GaN HFETs for Microwave/Millimeter-Wave Front- End Applications
 
Hiroyuki Sakai, Masaaki Nishijima, Tomohiro Murata, Yutaka Hirose, Masahiro Hikita ,Noboru Negoro, Yasuhiro Uemoto, Kaoru Inoue, Tsuyoshi Tanaka, Daisuke Ueda (松下電器産業 半導体社 半導体デバイス研究センター)
5. Possibility of GaN Power Devices for Future Power Electronics
 
Tsutomu Uesugi (豊田中央研究所 パワーデバイス研究室)
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