| Wednesday, December 13 08:50-10:30 |
Thursday, December 14 16:00-18:00 |
| Wednesday, December 13 14:00-15:40 |
Friday, December 15 08:50-10:30 |
| Wednesday, December 13 16:00-18:00 |
Friday, December 15 10:50-12:30 |
| Thursday, December 14 08:50-10:30 |
Friday, December 15 14:00-15:40 |
| Thursday, December 14 10:50-12:30 |
Friday, December 15 16:00-18:00 |
| Thursday, December 14 14:00-15:40 |
|
| TECHNICAL SESSION |
| Wednesday, December 13 16:00-18:00 |
Room A (301) |
|
| Session WE4A |
High-Performance Silicon Front-End ICs
Chairs : K. Agawa, Toshiba Corp., JAPAN, & N. Suematsu, Mitsubishi Electric Corp., JAPAN |
- WE4A-1
- A Novel CMOS Down-Conversion Mixer with Body Effect
H. S. Kang, S. G. Lee, N. G. Myoung *, B. G. Choi*, S. S. Park*, and C. S.Park, ICU, *ETRI, KOREA
|
- WE4A-2
- 10-GHz 0.35-μm SiGe BiCMOS Bottom-LO-Sub- Harmonic Gilbert Mixer with Lumped-Element Rat-Races
S.-C. Tseng and C. Meng, National Chiao Tung Univ., TAIWAN
|
- WE4A-3
- A CMOS Transceiver for IEEE 802.11a/b/g Wireless LAN Applications
Z. Soe, G. Watanabe, S. Zhou, F. Yang, K. Li, and R. Yan, Realtek Semiconductor Corp., U.S.A.
|
- WE4A-4
- A CMOS 5GHz RF Transceiver for Wireless HDTV Distribution
S. Shu, C. Liang, G. Tong, and B. Hu, Amedia Networks, Inc., U.S.A.
|
- WE4A-5
(INVITED)
- Silicon-Based Monolithic Millimeter-Wave Integrated Circuits
H. Wang, National Taiwan Univ., TAIWAN
|
Room B (302) |
|
| Session WE4B |
Device Modeling and Circuit Analysis for Power Amplifiers
Chairs : K. Honjo, The Univ. of Electro-Communications, JAPAN, & C. Snowden, Surrey Univ., U.K. |
- WE4B-1
- Large-Signal Modelling and Comparison of AlGaN/GaN HEMTs and SiC MESFETs
I. Angelov, K. Andersson, D. Schreuers*, N. Rorsman, V. Desmaris, M. Sudow, and H. Zirath, Chalmers Univ. of Technology, SWEDEN, *KU Leuven, BELGIUM
|
- WE4B-2
- Application of Optimal Delays Selection on Parallel Cascade Hammerstein Models for the Prediction of RFPower Amplifier Behavior
D. D. Silveira, P. L. Gilabert*, G. Magerl, and E. Bertran*, Vienna Univ. of Technology, AUSTRIA, *Universitat Politecnica de Catalunya, SPAIN
|
- WE4B-3
- Precise Modeling of Thermal Memory Effect for Power Amplifier Using Multi-Stage Thermal RC-Ladder Network
Y. Takahashi, R. Ishikawa, and K. Honjo, The Univ. of Electro-Communications, JAPAN
|
- WE4B-4
- Long-Finger HBT Analysis Based on Device and EM Co- Simulation Using FDTD Method
Y. Shinohara, R. Ishikawa, and K. Honjo, The Univ. of Electro-Communications, JAPAN
|
- WE4B-5
(INVITED)
- Coupled Electrothermal and Electromagnetic Modeling, Simulation and Design of RF and Microwave Power FETs
C. M. Snowden, Univ. of Surrey, U.K.
|
Room C (303) |
|
| Session WE4C |
SiGe/CMOS Low-Noise Devices and Circuits for Wireless Applications
Chairs : Y. Itoh, Shonan Institute of Technology, JAPAN, & M. Madihian, NEC Laboratories America, Inc., U.S.A. |
- WE4C-1
(INVITED)
- A Low Power SiGe GSM/DCS/WCDMA Receiver
M. Madihian, NEC Laboratories America, Inc., U.S.A.
|
- WE4C-2
- A 5.8 GHz 1.7 dB NF Fully Integrated Differential Low Noise Amplifier in CMOS
L. Aspemyr*,**, H. Sjoland**, H. Jacobsson*, M. Bao*, and G. Carchon***, *Ericsson AB, **Lund Univ., SWEDEN, ***IMEC, BELGIUM
|
- WE4C-3
- An Ultra-Low Voltage UWB CMOS Low Noise Amplifier
Y.-H. Yu, Y.-J. E. Chen, and D. Heo*, National Taiwan Univ., TAIWAN, *Washington State Univ., U.S.A.
|
- WE4C-4
- A Ka-Band Low Noise Amplifier Using Standard 0.18 μm CMOS Technology for Ka-Bnad Communication System Applications
S.-H. Yen, Y.-S. Lin, and C.-C. Chen, National Chi-Nan Univ., TAIWAN
|
- WE4C-5
- A High Performance CMOS LNA for System-on-Chip GPS
B. Bokinge, W. Einerman, A. Emericks, C. Grewing, O. Pettersson, D. Theil, and S. Waasen, Infineon Technologies Nordic AB, SWEDEN
|
Room D (304) |
|
| Session WE4D |
Reconfigurable Antennas
Chairs : K. Nishizawa, Mitsubishi Electric Corp., JAPAN, & R. Sorrentino, Univ. of Perugia, ITALY |
- WE4D-1
(INVITED)
- Dual Band Reconfigurable Beam Forming Networks for WLAN Applications
R. Sorrentino, R. V. Gatti, L. Marcaccioli, A. Ocera, E. Sbarra, and M. A. Corbucci, Univ. of Perugia, ITALY
|
- WE4D-2
- Waveguide Slot Array In-Motion Antenna for Receiving Both RHCP and LHCP Using Single Layer Polarizer
K.-S. Son, S.-Y. Hwang*, C.-G. Park*, and J.-W. Yu, KAIST, *Wiworld Co., Ltd., KOREA
|
- WE4D-3
- Design of Compact Switched Slot Antenna
W. H. Chen, Z. H. Feng, J. W. Sun, Y. Furuya*, and A. Kuramoto*, Tsinghua Univ., CHINA, *NEC Corp., JAPAN
|
- WE4D-4
- Realization and Measurements of Planar Switchable Antenna System
J. Sun, W. Chen, X. Wang, Z. Feng, Y. Furuya*, and A. Kuramoto*, Tsinghua Univ., CHINA, *NEC Corp., JAPAN
|
- WE4D-5
- A Consideration On A Beam Adjustable Microstrip Array Antenna
M. Yassir, Y. Kimura, and M. Haneishi, Saitama Univ., JAPAN
|
Room E (311+312) |
|
| Session WE4E |
Recent Advances on Periodic and Multilayered Structures
Chairs : T. Hiraoka, Kanagawa Univ., JAPAN, & C. L. Wang, National Taiwan Univ. of Science and Technology, TAIWAN |
- WE4E-1
- Control of the Electrodynamic Properties of The Waveguide Formed by the Gap between Two Periodic Layered Structures by Means of the External Fields
A. A. Bulgakov, V. K. Kononenko, and O. V. Kostylyova, Institute of Electronics and Radiophysics of NAS of Ukraine, UKRAINE
|
- WE4E-2
- Investigation of Reflection and Transmission Coefficients on Active Multilayered Semiconductor Structure
A. A. Bulgakov and O. V. Shramkova, The National Academy of Sciences of Ukraine, UKRAINE
|
- WE4E-3
- Advanced 3D LTCC Passive Components Using Cavity Structures for 60GHz Gigabit Wireless Systems
J.-H. Lee, N. Kidera*, A. Traille, S. Pinel, J. Laskar, and M. Tentzeris, Georgia Institute of Technology, U.S.A., *Asahi Glass Co., Ltd., JAPAN
|
- WE4E-4
- Wideband Aperture Coupled Stacked Patch Type Microstrip to Waveguide Transition for V-Band
H. Y. Lee, D. S. Jun, S. E. Moon, E. K. Kim, J. H. Park, and K. H. Park, Electronics and Telecommunications Research Institute, KOREA
|
- WE4E-5
(INVITED)
- Periodically Loaded Transmission Line Media/Materials with Infinite Extent on Coplanar Waveguide: Guided-Wave Performances
L. Zhu, Nanyang Technological Univ., SINGAPORE
|
Room F (313+314) |
|
| Session WE4F |
Packaging Technology
Chairs : H. Kondoh, Hitachi, Ltd., JAPAN, & H. Barnes, Agilent Technologies, U.S.A. |
- WE4F-1
- Design-for-Manufacturability (DFM) Methodology and Yield Analysis for Embedded RF Circuits for System-in-Package (SiP) Applications
S. Mukherjee and M. Swaminathan, Georgia Institute of Technology, U.S.A.
|
- WE4F-2
- Estimation of Radiated Emission from the Power/Ground Planes and Its Reduction Using an Improved Calculation Method
S. Kahng, Univ. of Incheon, KOREA
|
- WE4F-3
- Development of a Pogo Pin Assembly and Via Design for Multi-Gigabit Interfaces on Automatic Test Equipment
H. Barnes, J. Moreira*, H. Ossoinig*, M. Wollitzer**, T. Schmid** and M. Tsai***, Verigy Inc., U.S.A., *Verigy Inc., GERMANY, **Rosenberger, GERMANY, ***Xilinx Inc., U.S.A.
|
- WE4F-4
- A Front-End Module for CDMA Based on Zero Shrinkage of LTCC
D. Kim, H.-M. Cho, J.-I. Ryu, J.-C. Kim, J.-C. Park, and N.-K. Kang, Korea Electronics Technology Institute, KOREA
|
- WE4F-5
(INVITED)
- On-Wafer Level Packaging of RF MEMS Devices for Ka-Band Applications
Q. Wu*, B.-S. Jin*, K. Tang*, X.-J. He*, F. Zhang**, and J.-C. Lee*,**, *Harbin Institute of Technology, CHINA,**Kwangwoon Univ., KOREA
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